Unveiling the Influence of Selective-area-regrowth Interfaces on Local Electronic Properties of GaN p-n Junctions for Efficient Power Devices

Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique

(2021) Wenxin Tang et al.   APPLIED PHYSICS LETTERS

Current Transport Mechanism of High-Performance Novel GaN MIS Diode

(2021) Tao Zhang et al.   IEEE ELECTRON DEVICE LETTERS

1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

(2021) Jingcun Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress

(2021) Tetsuo Narita et al.   APPLIED PHYSICS LETTERS

Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II

(2021) Houqiang Fu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions

(2021) Tomoyuki Shoji et al.   Applied Physics Express

A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl)

(2020) Bingjun Li et al.   JOURNAL OF CRYSTAL GROWTH

60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K

(2020) Dong Ji et al.   APPLIED PHYSICS LETTERS

Performance Limits of Vertical Unipolar Power Devices in GaN and 4H-SiC

(2020) James A. Cooper et al.   IEEE ELECTRON DEVICE LETTERS

Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films

(2020) Po-Yi Su et al.   APPLIED PHYSICS LETTERS

Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes

(2020) Jingcun Liu et al.   IEEE ELECTRON DEVICE LETTERS

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

(2020) Chen Yang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices

(2020) Kai Fu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

(2019) Hanxiao Liu et al.   APPLIED PHYSICS LETTERS

4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability

(2019) Hiroshi Ohta et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms

(2019) Wenshen Li et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability

(2019) Hayata Fukushima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

(2019) Sun et al.   Electronics

In situ and selective area etching of GaN by tertiarybutylchloride (TBCl)

(2019) Bingjun Li et al.   APPLIED PHYSICS LETTERS

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics

(2019) Kai Fu et al.   IEEE ELECTRON DEVICE LETTERS

Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m$\Omega\cdot$ cm2/1500 V GaN Diodes

(2019) Dong Ji et al.   IEEE ELECTRON DEVICE LETTERS

High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings

(2019) Houqiang Fu et al.   IEEE ELECTRON DEVICE LETTERS

Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes

(2019) Andrew Aragon et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE

(2018) Henryk Turski et al.   JOURNAL OF CRYSTAL GROWTH

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

(2018) F. S. Choi et al.   JOURNAL OF APPLIED PHYSICS

Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

(2018) Simon Kotzea et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes

(2017) Houqiang Fu et al.   IEEE ELECTRON DEVICE LETTERS

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

(2015) Ramya Yeluri et al.   APPLIED PHYSICS LETTERS

4-kV and 2.8- $\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents

(2015) I. C. Kizilyalli et al.   IEEE ELECTRON DEVICE LETTERS

Vertical Power p-n Diodes Based on Bulk GaN

(2015) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

3.7 kV Vertical GaN PN Diodes

(2014) Isik C. Kizilyalli et al.   IEEE ELECTRON DEVICE LETTERS

Spectroscopic study of semipolar (112¯2)-HVPE GaN exhibiting high oxygen incorporation

(2014) Philipp Schustek et al.   JOURNAL OF APPLIED PHYSICS

The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN

(2014) Binglei Fu et al.   JOURNAL OF ELECTRONIC MATERIALS

Comparative studies of polar (0001) and semipolar n-type GaN with different Si doping concentrations

(2013) Sang-Hyun Han et al.   CURRENT APPLIED PHYSICS

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

(2013) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Survey of Wide Bandgap Power Semiconductor Devices

(2013) Jose Millan et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

The effect of thermal reactor neutron irradiation on semi-insulating GaN

(2013) Jie Qiu et al.   Radiation Effects and Defects in Solids

Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

(2013) Srabanti Chowdhury et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Local current conduction due to edge dislocations in deformed GaN studied by scanning spreading resistance microscopy

(2012) Takashi Yokoyama et al.   EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

(2012) David A. Browne et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Unintentional doping in GaN

(2012) Tongtong Zhu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Mg and Si dopant incorporation and segregation in GaN

(2011) Th. Schmidt et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

(2009) Samantha C. Cruz et al.   JOURNAL OF CRYSTAL GROWTH

Electrical conductivities of nanosheets studied by conductive atomic force microscopy

(2009) Neval Yilmaz et al.   MATERIALS CHEMISTRY AND PHYSICS

Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures

(2009) Engin Arslan et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY