GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

Published 2020 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 10, Pages 3972-3977
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-08-06
DOI
10.1109/ted.2020.3010183

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.