4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability

Published 2019 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 58, Issue SC, Pages SCCD03
Publisher
Japan Society of Applied Physics
Online
2019-04-16
DOI
10.7567/1347-4065/ab0cfa

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.