Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

(2019) Hanxiao Liu et al.   APPLIED PHYSICS LETTERS

Dopant profiling in p-i-n GaN structures using secondary electrons

(2019) Shanthan R. Alugubelli et al.   JOURNAL OF APPLIED PHYSICS

Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

(2018) Kai Fu et al.   APPLIED PHYSICS LETTERS

Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

(2018) Simon Kotzea et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

(2017) Yuhao Zhang et al.   IEEE ELECTRON DEVICE LETTERS

GaN-on-Si Power Technology: Devices and Applications

(2017) Kevin J. Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reduction of reverse-leakage current in selective-area-grown GaN-based core-shell nanostructure LEDs using AlGaN layers

(2016) Ashwin K. Rishinaramangalam et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

(2009) Samantha C. Cruz et al.   JOURNAL OF CRYSTAL GROWTH

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

(2008) W. Feng et al.   JOURNAL OF APPLIED PHYSICS