Spectroscopic study of semipolar (112¯2)-HVPE GaN exhibiting high oxygen incorporation

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

(2014) M. Amilusik et al.   JOURNAL OF CRYSTAL GROWTH

Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

(2012) Keisuke Yamane et al.   Applied Physics Express

Analysis of doping induced wafer bow during GaN:Si growth on sapphire

(2012) F. Brunner et al.   JOURNAL OF APPLIED PHYSICS

Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements

(2011) G. Callsen et al.   APPLIED PHYSICS LETTERS

Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre-structured r-plane sapphire substrates

(2010) Stephan Schwaiger et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

(2009) Samantha C. Cruz et al.   JOURNAL OF CRYSTAL GROWTH

Recombination of free and bound excitons in GaN

(2008) B. Monemar et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS