60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K

Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

(2019) Dong Ji et al.   APPLIED PHYSICS LETTERS

Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m$\Omega\cdot$ cm2/1500 V GaN Diodes

(2019) Dong Ji et al.   IEEE ELECTRON DEVICE LETTERS

Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)

(2018) Dong Ji et al.   IEEE ELECTRON DEVICE LETTERS

Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates

(2015) Jeomoh Kim et al.   Applied Physics Express

Ion Implantation-Based Edge Termination to Improve III-N APD Reliability and Performance

(2015) Puneet Suvarna et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Vertical Power p-n Diodes Based on Bulk GaN

(2015) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

GaN/SiC avalanche photodiodes

(2011) Qiugui Zhou et al.   APPLIED PHYSICS LETTERS

Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates

(2010) E. Cicek et al.   APPLIED PHYSICS LETTERS

Temperature Dependence of Avalanche Breakdown in InP and InAlAs

(2010) Lionel Juen Jin Tan et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates

(2009) Yun Zhang et al.   APPLIED PHYSICS LETTERS

High quantum efficiency back-illuminated GaN avalanche photodiodes

(2008) C. Bayram et al.   APPLIED PHYSICS LETTERS

High-performance visible-blind GaN-based p-i-n photodetectors

(2008) Bayram Butun et al.   APPLIED PHYSICS LETTERS

Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes

(2008) Russell D. Dupuis et al.   JOURNAL OF CRYSTAL GROWTH