Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms

Published 2019 View Full Article

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Title
Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 58, Issue SC, Pages SCCD15
Publisher
Japan Society of Applied Physics
Online
2019-05-20
DOI
10.7567/1347-4065/ab0f1b

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