In situ and selective area etching of GaN by tertiarybutylchloride (TBCl)

Title
In situ and selective area etching of GaN by tertiarybutylchloride (TBCl)
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 115, Issue 16, Pages 162101
Publisher
AIP Publishing
Online
2019-10-15
DOI
10.1063/1.5120420

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