Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

(2015) Michael J. Uren et al.   IEEE ELECTRON DEVICE LETTERS

Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

(2015) Alexander Pooth et al.   JOURNAL OF APPLIED PHYSICS

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

(2015) F.A. Marino et al.   SOLID-STATE ELECTRONICS

Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

(2014) Michael J. Uren et al.   APPLIED PHYSICS LETTERS

Silicon Substrate Engineered High-Voltage High-Temperature GaN-DHFETs

(2013) Puneet Srivastava et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

(2013) A. Pérez-Tomás et al.   JOURNAL OF APPLIED PHYSICS

Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer

(2012) S. A. Chevtchenko et al.   APPLIED PHYSICS LETTERS

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

(2012) Michael J. Uren et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Unintentional doping in GaN

(2012) Tongtong Zhu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates

(2012) Mohammed R. Ramdani et al.   SOLID-STATE ELECTRONICS

GaN Power Transistors on Si Substrates for Switching Applications

(2010) Nariaki Ikeda et al.   PROCEEDINGS OF THE IEEE

Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon

(2009) S. Lawrence Selvaraj et al.   Applied Physics Express

Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN

(2009) J. Sumner et al.   JOURNAL OF APPLIED PHYSICS

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

(2009) Samantha C. Cruz et al.   JOURNAL OF CRYSTAL GROWTH

Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride

(2008) J. Sumner et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Advances in AFM for the electrical characterization of semiconductors

(2008) Rachel A Oliver   REPORTS ON PROGRESS IN PHYSICS