Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes

Published 2020 View Full Article

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Title
Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 9, Pages 1328-1331
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-07-22
DOI
10.1109/led.2020.3010784

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