Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability

Published 2019 View Full Article

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Title
Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 58, Issue SC, Pages SCCD25
Publisher
Japan Society of Applied Physics
Online
2019-05-28
DOI
10.7567/1347-4065/ab106c

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