Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy
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Title
Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy
Authors
Keywords
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Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 30, Issue 4, Pages 041513
Publisher
American Vacuum Society
Online
2012-06-14
DOI
10.1116/1.4727967
References
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Related references
Note: Only part of the references are listed.- NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy
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