Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

(2020) Chen Yang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability

(2019) Kai Fu et al.   IEEE ELECTRON DEVICE LETTERS

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

(2019) Hanxiao Liu et al.   APPLIED PHYSICS LETTERS

GaN power devices: current status and future challenges

(2019) Tetsuzo Ueda   JAPANESE JOURNAL OF APPLIED PHYSICS

Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

(2019) Shanthan R. Alugubelli et al.   APPLIED PHYSICS LETTERS

A > 3 kV/2.94 m $\Omega\cdot$ cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

(2019) Tao Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics

(2019) Kai Fu et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

(2018) Kai Fu et al.   APPLIED PHYSICS LETTERS

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

(2017) Zongyang Hu et al.   IEEE ELECTRON DEVICE LETTERS

Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes

(2017) Houqiang Fu et al.   IEEE ELECTRON DEVICE LETTERS

Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness

(2016) Maher Tahhan et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

(2015) Fan Yang et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

(2012) Jia Guo et al.   IEEE ELECTRON DEVICE LETTERS

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

(2012) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

(2011) Yuhua Wen et al.   APPLIED PHYSICS LETTERS

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

(2011) Srabanti Chowdhury et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth

(2010) Uttam Singisetti et al.   IEEE ELECTRON DEVICE LETTERS

High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

(2010) G. Koblmüller et al.   JOURNAL OF APPLIED PHYSICS

Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation

(2010) Liang Pang et al.   JOURNAL OF ELECTRONIC MATERIALS

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE