Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics

Published 2019 View Full Article

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Title
Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 11, Pages 1728-1731
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-09-17
DOI
10.1109/led.2019.2941830

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