Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions
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Title
Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions
Authors
Keywords
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Journal
Applied Physics Express
Volume 14, Issue 11, Pages 114001
Publisher
IOP Publishing
Online
2021-09-25
DOI
10.35848/1882-0786/ac2a03
References
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