The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN

Published 2014 View Full Article

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Title
The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN
Authors
Keywords
<em class=EmphasisTypeItalic >p</em>-GaN, Mg doping, adatom surface mobility, Mg incorporation ability, growth rate, growth pressure, MOCVD, GaN
Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 43, Issue 4, Pages 1244-1248
Publisher
Springer Nature
Online
2014-01-22
DOI
10.1007/s11664-014-3005-9
References
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