Dynamic conductance characteristics in HfOx-based resistive random access memory

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory

(2016) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations

(2016) Boubacar Traore et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer

(2016) Fei Zhou et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy

(2016) Yao-Feng Chang et al.   PROGRESS IN SOLID STATE CHEMISTRY

Interface-induced two-step RESET for filament-based multi-level resistive memory

(2016) Fang Yuan et al.   SUPERLATTICES AND MICROSTRUCTURES

Memristors for Energy-Efficient New Computing Paradigms

(2016) Doo Seok Jeong et al.   Advanced Electronic Materials

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

(2016) Yao-Feng Chang et al.   Scientific Reports

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

(2015) Fei Zhou et al.   APPLIED PHYSICS LETTERS

Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

(2015) Umesh Chand et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Physical and chemical mechanisms in oxide-based resistance random access memory

(2015) Kuan-Chang Chang et al.   Nanoscale Research Letters

Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability

(2014) Stefano Ambrogio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization

(2014) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory

(2014) Pengxiao Sun et al.   Journal of Computational Electronics

A Combined Modulation of Set Current With Reset Voltage to Achieve 2-bit/cell Performance for Filament-Based RRAM

(2014) Fang Yuan et al.   IEEE Journal of the Electron Devices Society

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Study of Resistive Switching Characteristics on a Temperature-Sensitive FeOx-Transition Layer in a TiN/SiO2/FeOx/Fe Structure

(2012) Yao-Feng Chang et al.   ECS Journal of Solid State Science and Technology

A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures

(2010) Li-Wei Feng et al.   APPLIED PHYSICS LETTERS

Impact of Electrode Materials on Resistive-Switching Memory Programming

(2009) U. Russo et al.   IEEE ELECTRON DEVICE LETTERS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution

(2008) I. H. Inoue et al.   PHYSICAL REVIEW B