Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

(2014) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Tunable Electroluminescence in Planar Graphene/SiO2Memristors

(2013) Congli He et al.   ADVANCED MATERIALS

High-Performance and Low-Power Rewritable SiOx1 kbit One Diode-One Resistor Crossbar Memory Array

(2013) Gunuk Wang et al.   ADVANCED MATERIALS

Effects of sidewall etching on electrical properties of SiOx resistive random access memory

(2013) Yanzhen Wang et al.   APPLIED PHYSICS LETTERS

Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory

(2013) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory

(2013) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

(2013) Li Ji et al.   NANO LETTERS

Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory

(2012) Yanzhen Wang et al.   APPLIED PHYSICS LETTERS

Study of polarity effect in SiOx-based resistive switching memory

(2012) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Tristate Operation in Resistive Switching of $ \hbox{SiO}_{2}$ Thin Films

(2012) Yen-Ting Chen et al.   IEEE ELECTRON DEVICE LETTERS

Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

(2012) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in silicon suboxide films

(2012) Adnan Mehonic et al.   JOURNAL OF APPLIED PHYSICS

In situ imaging of the conducting filament in a silicon oxide resistive switch

(2012) Jun Yao et al.   Scientific Reports

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications

(2010) Li-Wei Feng et al.   APPLIED PHYSICS LETTERS

A Unified Hopping Model for Subthreshold Current of Phase-Change Memories in Amorphous State

(2010) Alessandro Calderoni et al.   IEEE ELECTRON DEVICE LETTERS

Silicon Oxide: A Non-innocent Surface for Molecular Electronics and Nanoelectronics Studies

(2010) Jun Yao et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Resistive Switches and Memories from Silicon Oxide

(2010) Jun Yao et al.   NANO LETTERS

Switching dynamics in titanium dioxide memristive devices

(2009) Matthew D. Pickett et al.   JOURNAL OF APPLIED PHYSICS

Etching-dependent reproducible memory switching in vertical SiO2 structures

(2008) Jun Yao et al.   APPLIED PHYSICS LETTERS

Dissociative Chemisorption of Water onto Silica Surfaces and Formation of Hydronium Ions

(2008) T. S. Mahadevan et al.   Journal of Physical Chemistry C

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Reactions of Water Molecules in Silica-Based Network Glasses

(2008) I. G. Batyrev et al.   PHYSICAL REVIEW LETTERS

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE