Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

Characterization of external resistance effect and performance optimization in unipolar-type SiOx-based resistive switching memory

(2014) Fei Zhou et al.   APPLIED PHYSICS LETTERS

The x dependent two kinds of resistive switching behaviors in SiOx films with different x component

(2014) Yuefei Wang et al.   APPLIED PHYSICS LETTERS

Discussion on device structures and hermetic encapsulation for SiOx random access memory operation in air

(2014) Fei Zhou et al.   APPLIED PHYSICS LETTERS

Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization

(2014) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

(2014) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory

(2013) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory

(2013) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory

(2012) Yanzhen Wang et al.   APPLIED PHYSICS LETTERS

Study of polarity effect in SiOx-based resistive switching memory

(2012) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Tristate Operation in Resistive Switching of $ \hbox{SiO}_{2}$ Thin Films

(2012) Yen-Ting Chen et al.   IEEE ELECTRON DEVICE LETTERS

Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

(2012) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in silicon suboxide films

(2012) Adnan Mehonic et al.   JOURNAL OF APPLIED PHYSICS

Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications

(2010) Li-Wei Feng et al.   APPLIED PHYSICS LETTERS

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(2010) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

Resistive Switches and Memories from Silicon Oxide

(2010) Jun Yao et al.   NANO LETTERS

Etching-dependent reproducible memory switching in vertical SiO2 structures

(2008) Jun Yao et al.   APPLIED PHYSICS LETTERS