Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices

(2020) Zhe Cheng et al.   ACS Applied Materials & Interfaces

Low-temperature direct bonding of β-Ga2O3 and diamond substrates under atmospheric conditions

(2020) Takashi Matsumae et al.   APPLIED PHYSICS LETTERS

Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs

(2020) Nayana Remesh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Structural evolution of laser-irradiated ultrananocrystalline diamond/amorphous carbon composite films prepared by coaxial arc plasma

(2020) Abdelrahman Zkria et al.   Applied Physics Express

Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces

(2020) Yutaka Ohno et al.   APPLIED SURFACE SCIENCE

Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

(2020) Jianbo Liang et al.   DIAMOND AND RELATED MATERIALS

Heterogeneous GaN-Si integration via plasma activation direct bonding

(2020) Takashi Matsumae et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Annealing effect of surface-activated bonded diamond/Si interface

(2019) Jianbo Liang et al.   DIAMOND AND RELATED MATERIALS

Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds

(2019) M. Amilusik et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

(2019) Soumen Mandal et al.   ACS Applied Materials & Interfaces

Impact of focused ion beam on structural and compositional analysis of interfaces fabricated by surface activated bonding

(2019) Yutaka Ohno et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Hydrophilic direct bonding of diamond (111) substrate using treatment with H2SO4/H2O2

(2019) Takashi Matsumae et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Room temperature bonding of GaN on diamond wafers by using Mo/Au nano-layer for high-power semiconductor devices

(2019) Kang Wang et al.   SCRIPTA MATERIALIA

Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

(2018) Luke Yates et al.   ACS Applied Materials & Interfaces

Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture

(2018) Jong Cheol Kim et al.   SCRIPTA MATERIALIA

Stability of diamond/Si bonding interface during device fabrication process

(2018) Jianbo Liang et al.   Applied Physics Express

Long range, non-destructive characterization of GaN substrates for power devices

(2018) J.C. Gallagher et al.   JOURNAL OF CRYSTAL GROWTH

Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding

(2018) Shoji Yamajo et al.   APPLIED SURFACE SCIENCE

3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology

(2017) Tingting Liu et al.   IEEE ELECTRON DEVICE LETTERS

Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature

(2017) Yutaka Ohno et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effects of thermal annealing on structural and electrical properties of surface-activated n-GaSb/n-GaInP direct wafer bonds

(2017) Felix Predan et al.   JOURNAL OF APPLIED PHYSICS

Synthesis of quenchable amorphous diamond

(2017) Zhidan Zeng et al.   Nature Communications

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

(2016) Huarui Sun et al.   IEEE ELECTRON DEVICE LETTERS

Stress analysis of transferable crack-free gallium nitride microrods grown on graphene/SiC substrate

(2016) Lin Qi et al.   MATERIALS LETTERS

Thermal conductance of silicon interfaces directly bonded by room-temperature surface activation

(2015) Masanori Sakata et al.   APPLIED PHYSICS LETTERS

GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

(2015) Dong Liu et al.   APPLIED PHYSICS LETTERS

Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

(2015) Huarui Sun et al.   APPLIED PHYSICS LETTERS

Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

(2015) Pane-Chane Chao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers

(2015) Eiji Higurashi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Current–voltage and spectral-response characteristics of surface-activated-bonding-based InGaP/GaAs/Si hybrid triple-junction cells

(2015) Naoteru Shigekawa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Research Update: Direct conversion of amorphous carbon into diamond at ambient pressures and temperatures in air

(2015) Jagdish Narayan et al.   APL Materials

Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions

(2014) J. Liang et al.   APPLIED PHYSICS LETTERS

Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

(2014) J. W. Pomeroy et al.   APPLIED PHYSICS LETTERS

Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

(2014) Hitoshi Umezawa et al.   IEEE ELECTRON DEVICE LETTERS

Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding

(2013) Jianbo Liang et al.   Applied Physics Express

Electrical properties of Si/Si interfaces by using surface-activated bonding

(2013) J. Liang et al.   JOURNAL OF APPLIED PHYSICS

Fabrication of GaInP/GaAs//Si Solar Cells by Surface Activated Direct Wafer Bonding

(2013) Karen Derendorf et al.   IEEE Journal of Photovoltaics

High temperature application of diamond power device

(2012) Hitoshi Umezawa et al.   DIAMOND AND RELATED MATERIALS

Improved Thermal Interfaces of GaN–Diamond Composite Substrates for HEMT Applications

(2012) Jungwan Cho et al.   IEEE Transactions on Components Packaging and Manufacturing Technology

Electroluminescence and capacitance-voltage characteristics of single-crystal n-type AlN (0001)/p-type diamond (111) heterojunction diodes

(2011) Kazuyuki Hirama et al.   APPLIED PHYSICS LETTERS

Interfacial Behavior of Surface Activated p-GaP/n-GaAs Bonded Wafers at Room Temperature

(2010) M. M. R. Howlader et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600°C

(2010) M.M.R. Howlader et al.   THIN SOLID FILMS

Formation and characterization of 4-inch GaN-on-diamond substrates

(2009) D. Francis et al.   DIAMOND AND RELATED MATERIALS