Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature

Title
Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 57, Issue 2S1, Pages 02BA01
Publisher
Japan Society of Applied Physics
Online
2017-11-25
DOI
10.7567/jjap.57.02ba01

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now