Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs

Authors

Keywords

Journal

Volume 67, Issue 6, Pages 2311-2317

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2020-05-09

DOI

10.1109/ted.2020.2989421

Discuss science. Find collaborators. Network.

Join a conversation

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started