Heterogeneous GaN-Si integration via plasma activation direct bonding

Sequential plasma activation methods for hydrophilic direct bonding at sub-200 °C

(2018) Ran He et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The 2018 GaN power electronics roadmap

(2018) H Amano et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate

(2018) V. N. Bessolov et al.   TECHNICAL PHYSICS LETTERS

Glass-on-LiNbO3 heterostructure formed via a two-step plasma activated low-temperature direct bonding method

(2018) Jikai Xu et al.   APPLIED SURFACE SCIENCE

Growth behavior of hexagonal GaN on Si(100) and Si(111) substrates prepared by pulsed laser deposition

(2016) Wei-Kai Wang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111)

(2015) Abheek Bardhan et al.   IETE TECHNICAL REVIEW

The effects of oxygen plasma and humidity on surface roughness, water contact angle and hardness of silicon, silicon dioxide and glass

(2014) A U Alam et al.   JOURNAL OF MICROMECHANICS AND MICROENGINEERING

Low temperature direct wafer bonding of GaAs to Si via plasma activation

(2013) C. Y. Yeo et al.   APPLIED PHYSICS LETTERS

Pulsed laser deposition of hexagonal GaN-on-Si(100) template for MOCVD applications

(2013) Kun-Ching Shen et al.   OPTICS EXPRESS

Low-Temperature Bonding of GaN on Si Using a Nonalloyed Metal Ohmic Contact Layer for GaN-Based Heterogeneous Devices

(2011) Eiji Higurashi et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

(2009) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

(2009) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS