Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

Low-temperature direct bonding of β-Ga2O3 and diamond substrates under atmospheric conditions

(2020) Takashi Matsumae et al.   APPLIED PHYSICS LETTERS

Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces

(2020) Yutaka Ohno et al.   APPLIED SURFACE SCIENCE

Annealing effect of surface-activated bonded diamond/Si interface

(2019) Jianbo Liang et al.   DIAMOND AND RELATED MATERIALS

Optical AND operation in n-AlGaAs/GaAs heterojunction field effect transistor

(2018) T. Kawazu et al.   APPLIED PHYSICS LETTERS

Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

(2018) Fengwen Mu et al.   SCRIPTA MATERIALIA

Stability of diamond/Si bonding interface during device fabrication process

(2018) Jianbo Liang et al.   Applied Physics Express

Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding

(2018) Shoji Yamajo et al.   APPLIED SURFACE SCIENCE

Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature

(2017) Yutaka Ohno et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer

(2015) K. Nosaeva et al.   ELECTRONICS LETTERS

Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers

(2015) Eiji Higurashi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions

(2014) J. Liang et al.   APPLIED PHYSICS LETTERS

Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding

(2013) Jianbo Liang et al.   Applied Physics Express

Electrical properties of Si/Si interfaces by using surface-activated bonding

(2013) J. Liang et al.   JOURNAL OF APPLIED PHYSICS

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

(2011) Kazuyuki Hirama et al.   APPLIED PHYSICS LETTERS

Microscopy and Electrical Properties of Ge/Ge Interfaces Bonded by Surface-Activated Wafer Bonding Technology

(2011) Kentaroh Watanabe et al.   JAPANESE JOURNAL OF APPLIED PHYSICS