Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

Improved thermal management for GaN power electronics: Silver diamond composite packages

(2012) M. Faqir et al.   MICROELECTRONICS RELIABILITY

Improved Thermal Interfaces of GaN–Diamond Composite Substrates for HEMT Applications

(2012) Jungwan Cho et al.   IEEE Transactions on Components Packaging and Manufacturing Technology

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

(2011) Kazuyuki Hirama et al.   APPLIED PHYSICS LETTERS

Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

(2010) Athikom Manoi et al.   IEEE ELECTRON DEVICE LETTERS

Formation and characterization of 4-inch GaN-on-diamond substrates

(2009) D. Francis et al.   DIAMOND AND RELATED MATERIALS

Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy

(2009) T. Batten et al.   JOURNAL OF APPLIED PHYSICS

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE