Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

(2014) J. W. Pomeroy et al.   APPLIED PHYSICS LETTERS

Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers

(2014) James W. Pomeroy et al.   IEEE ELECTRON DEVICE LETTERS

Phonon scattering in strained transition layers for GaN heteroepitaxy

(2014) Jungwan Cho et al.   PHYSICAL REVIEW B

AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz

(2013) D.C. Dumka et al.   ELECTRONICS LETTERS

Low Thermal Resistances at GaN–SiC Interfaces for HEMT Technology

(2012) Jungwan Cho et al.   IEEE ELECTRON DEVICE LETTERS

Influence of strain on thermal conductivity of silicon nitride thin films

(2012) M T Alam et al.   JOURNAL OF MICROMECHANICS AND MICROENGINEERING

Improved Thermal Interfaces of GaN–Diamond Composite Substrates for HEMT Applications

(2012) Jungwan Cho et al.   IEEE Transactions on Components Packaging and Manufacturing Technology

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

(2011) J. Kuzmik et al.   JOURNAL OF APPLIED PHYSICS

Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

(2010) Athikom Manoi et al.   IEEE ELECTRON DEVICE LETTERS

Formation and characterization of 4-inch GaN-on-diamond substrates

(2009) D. Francis et al.   DIAMOND AND RELATED MATERIALS

Thermal Characterization of $\hbox{Si}_{3}\hbox{N}_{4}$ Thin Films Using Transient Thermoreflectance Technique

(2009) Suyuan Bai et al.   IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C

(2008) Naoki Watanabe et al.   JOURNAL OF APPLIED PHYSICS