Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers

Published 2015 View Full Article

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Title
Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 54, Issue 3, Pages 030207
Publisher
Japan Society of Applied Physics
Online
2015-01-22
DOI
10.7567/jjap.54.030207

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