Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding

Published 2018 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding
Authors
Keywords
GaAs/Si, Surface activated bonding, HAXPES, Buried interface
Journal
APPLIED SURFACE SCIENCE
Volume 473, Issue -, Pages 627-632
Publisher
Elsevier BV
Online
2018-12-22
DOI
10.1016/j.apsusc.2018.12.199

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.