Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions

Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding

(2013) Jianbo Liang et al.   Applied Physics Express

Electrical properties of Si/Si interfaces by using surface-activated bonding

(2013) J. Liang et al.   JOURNAL OF APPLIED PHYSICS

Bow Free 4'' Diameter 3C-SiC Epilayers Formed upon Wafer-Bonded Si/SiC Substrates

(2012) M. R. Jennings et al.   ECS Solid State Letters

Interfacial Behavior of Surface Activated p-GaP/n-GaAs Bonded Wafers at Room Temperature

(2010) M. M. R. Howlader et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Si/SiC bonded wafer: A route to carbon free SiO2 on SiC

(2009) A. Pérez-Tomás et al.   APPLIED PHYSICS LETTERS

Electrical transport properties of wafer-fused p-GaAs/n-GaN heterojunctions

(2008) Chuanxin Lian et al.   APPLIED PHYSICS LETTERS

Si∕SiC Heterojunctions Fabricated by Direct Wafer Bonding

(2008) M. R. Jennings et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS