Electrical properties of Si/Si interfaces by using surface-activated bonding

Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding

(2013) Jianbo Liang et al.   Applied Physics Express

Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity

(2013) S. Essig et al.   JOURNAL OF APPLIED PHYSICS

Fast Atom Beam Activated Wafer Bonds between n-Si and n-GaAs with Low Resistance

(2013) S. Essig et al.   ECS Journal of Solid State Science and Technology

Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer

(2011) Liwen Sang et al.   APPLIED PHYSICS LETTERS

High-temperature ultraviolet detection based on InGaN Schottky photodiodes

(2011) Liwen Sang et al.   APPLIED PHYSICS LETTERS

Reduction of the potential energy barrier and resistance at wafer-bonded n-GaAs/n-GaAs interfaces by sulfur passivation

(2011) Michael J. Jackson et al.   JOURNAL OF APPLIED PHYSICS

Heterogeneous Integration of Compound Semiconductors

(2010) Oussama Moutanabbir et al.   Annual Review of Materials Research

Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

(2009) Engin Arslan et al.   APPLIED PHYSICS LETTERS

Electrical transport properties of wafer-fused p-GaAs/n-GaN heterojunctions

(2008) Chuanxin Lian et al.   APPLIED PHYSICS LETTERS