Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600°C

Published 2010 View Full Article

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Title
Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600°C
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 519, Issue 2, Pages 804-808
Publisher
Elsevier BV
Online
2010-09-08
DOI
10.1016/j.tsf.2010.08.144

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