3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology

Published 2017 View Full Article

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Title
3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 10, Pages 1417-1420
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-08-09
DOI
10.1109/led.2017.2737526

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