Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

(2018) S. F. Chichibu et al.   JOURNAL OF APPLIED PHYSICS

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

(2017) Masahiro Horita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams

(2017) Akira Uedono et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Defect-Resistant Radiative Performance ofm-Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters

(2016) Shigefusa F. Chichibu et al.   ADVANCED MATERIALS

P-type doping of GaN$(000\bar{1})$ by magnesium ion implantation

(2016) Tetsuo Narita et al.   Applied Physics Express

Electronic and optical characteristics of anm-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer

(2016) Kazunobu Kojima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Low-resistivitym-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method

(2015) Kazunobu Kojima et al.   Applied Physics Express

Formation of definite GaN p–n junction by Mg-ion implantation to n − -GaN epitaxial layers grown on a high-quality free-standing GaN substrate

(2015) Takuya Oikawa et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam

(2015) Akira Uedono et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Green luminescence in Mg-doped GaN

(2014) M. A. Reshchikov et al.   PHYSICAL REVIEW B

Defect identification in semiconductors with positron annihilation: Experiment and theory

(2013) Filip Tuomisto et al.   REVIEWS OF MODERN PHYSICS

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

(2012) S. F. Chichibu et al.   JOURNAL OF APPLIED PHYSICS

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

(2011) B.N. Feigelson et al.   JOURNAL OF CRYSTAL GROWTH

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

(2010) Yu Saitoh et al.   Applied Physics Express

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Point defects in group-III nitride semiconductors studied by positron annihilation

(2009) A. Uedono et al.   JOURNAL OF CRYSTAL GROWTH

Bulk GaN crystals grown by HVPE

(2009) Kenji Fujito et al.   JOURNAL OF CRYSTAL GROWTH

Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer

(2008) Srabanti Chowdhury et al.   IEEE ELECTRON DEVICE LETTERS