1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

Authors

Keywords

Journal

Volume 35, Issue 9, Pages 939-941

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2014-08-02

DOI

10.1109/led.2014.2339197

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