标题
Impact ionization coefficients and critical electric field in GaN
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 129, Issue 18, Pages 185702
出版商
AIP Publishing
发表日期
2021-05-14
DOI
10.1063/5.0050793
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices
- (2021) Shinji Yamada et al. APPLIED PHYSICS LETTERS
- Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors
- (2020) Hajime Tanaka et al. Applied Physics Express
- Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC
- (2020) Dionysios Stefanakis et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Progress on and challenges of p-type formation for GaN power devices
- (2020) Tetsuo Narita et al. JOURNAL OF APPLIED PHYSICS
- Shockley–Read–Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p–n+ junction diodes
- (2019) Takuya Maeda et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability
- (2019) Hayata Fukushima et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination
- (2019) Takuya Maeda et al. IEEE ELECTRON DEVICE LETTERS
- Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination
- (2019) Takuya Maeda et al. APPLIED PHYSICS LETTERS
- Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures
- (2019) Dong Ji et al. APPLIED PHYSICS LETTERS
- Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities
- (2019) Hiroshi Ohta et al. IEEE ELECTRON DEVICE LETTERS
- Demonstration of 1200 V / 1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process
- (2019) Ryo Tanaka et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations
- (2018) Naoki Sawada et al. Applied Physics Express
- Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate
- (2018) S. F. Chichibu et al. APPLIED PHYSICS LETTERS
- Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates
- (2018) Lina Cao et al. APPLIED PHYSICS LETTERS
- Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage
- (2018) Takuya Maeda et al. APPLIED PHYSICS LETTERS
- Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
- (2018) Shigeyoshi Usami et al. APPLIED PHYSICS LETTERS
- The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate
- (2018) JOURNAL OF APPLIED PHYSICS
- Impact ionization coefficients of 4H-SiC in a wide temperature range
- (2018) Y. Zhao et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Wide range doping control and defect characterization of GaN layers with various Mg concentrations
- (2018) JOURNAL OF APPLIED PHYSICS
- In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates
- (2017) Chirag Gupta et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
- (2017) Min Sun et al. IEEE ELECTRON DEVICE LETTERS
- Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes
- (2017) Wenshen Li et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage
- (2016) Takuya Maeda et al. Applied Physics Express
- 1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability
- (2016) Kazuki Nomoto et al. IEEE ELECTRON DEVICE LETTERS
- 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
- (2015) Tohru Oka et al. Applied Physics Express
- 4-kV and 2.8- $\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents
- (2015) I. C. Kizilyalli et al. IEEE ELECTRON DEVICE LETTERS
- Vertical Power p-n Diodes Based on Bulk GaN
- (2015) Isik C. Kizilyalli et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices
- (2015) Hiroki Niwa et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
- (2014) Tohru Oka et al. Applied Physics Express
- 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
- (2014) Hui Nie et al. IEEE ELECTRON DEVICE LETTERS
- GaN transistors on Si for switching and high-frequency applications
- (2014) Tetsuzo Ueda et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Recent progress of GaN power devices for automotive applications
- (2014) Tetsu Kachi JAPANESE JOURNAL OF APPLIED PHYSICS
- A model for calculating impact ionization transition rate in wurtzite GaN for use in breakdown voltage simulation
- (2013) Kazuki Kodama et al. JOURNAL OF APPLIED PHYSICS
- Determination of the dielectric constant of GaN in the kHz frequency range
- (2011) M J Kane et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
- (2010) Yu Saitoh et al. Applied Physics Express
- Impact ionization rates for Si, GaAs, InAs, ZnS, and GaN in theGWapproximation
- (2010) Takao Kotani et al. PHYSICAL REVIEW B
- Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model
- (2009) Francesco Bertazzi et al. JOURNAL OF APPLIED PHYSICS
- Optical beam induced current measurements: principles and applications to SiC device characterization
- (2009) Christophe Raynaud et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now