Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices
Published 2021 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 118, Issue 10, Pages 102101
Publisher
AIP Publishing
Online
2021-03-09
DOI
10.1063/5.0040920
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate
- (2021) Masahiro Horita et al. APPLIED PHYSICS LETTERS
- Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching
- (2019) Shinji Yamada et al. Applied Physics Express
- Demonstration of 1200 V / 1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process
- (2019) Ryo Tanaka et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates: Metal work function dependence of Schottky barrier height
- (2018) Hiroyoshi Imadate et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET
- (2017) Chirag Gupta et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
- (2017) Min Sun et al. IEEE ELECTRON DEVICE LETTERS
- Dry Etching Technologies of Optical Device and III-V Compound Semiconductors
- (2017) Ryuichiro KAMIMURA et al. IEICE TRANSACTIONS ON ELECTRONICS
- Thermally enhanced formation of photon-induced damage on GaN films in Cl2 plasma
- (2017) Zecheng Liu et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Mapping etching induced damages on GaN surfaces using scanning internal photoemission microscopy
- (2017) Akihisa Terano et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Dry Etching Technologies of Optical Device and III-V Compound Semiconductors
- (2017) Ryuichiro KAMIMURA et al. IEICE TRANSACTIONS ON ELECTRONICS
- 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
- (2015) Tohru Oka et al. Applied Physics Express
- 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
- (2014) Hui Nie et al. IEEE ELECTRON DEVICE LETTERS
- Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors
- (2014) Zenji Yatabe et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Recent progress of GaN power devices for automotive applications
- (2014) Tetsu Kachi JAPANESE JOURNAL OF APPLIED PHYSICS
- Positron annihilation and cathodoluminescence study on inductively coupled plasma etched GaN
- (2014) Keita Kataoka et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Absolute surface energies of polar and nonpolar planes of GaN
- (2014) C. E. Dreyer et al. PHYSICAL REVIEW B
- Interface Properties of Al$_{2}$O$_{3}$/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
- (2012) Sungsik Kim et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
- (2010) Jun Suda et al. Applied Physics Express
- GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
- (2008) Masahito Kodama et al. Applied Physics Express
- Metallization contacts to nonpolar a-plane n-type GaN
- (2008) Hyunsoo Kim et al. APPLIED PHYSICS LETTERS
- Characterization of plasma etching damage on p-type GaN using Schottky diodes
- (2008) M. Kato et al. JOURNAL OF APPLIED PHYSICS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now