Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities

Published 2019 View Full Article

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Title
Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 1, Pages 123-126
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-11-27
DOI
10.1109/led.2019.2955720

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