Wide range doping control and defect characterization of GaN layers with various Mg concentrations

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

(2018)   JOURNAL OF APPLIED PHYSICS

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

(2017) Masahiro Horita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Cathodoluminescence Study on Thermal Recovery Process of Mg-Ion Implanted N-Polar GaN

(2017) Keita Kataoka et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

P-type doping of GaN$(000\bar{1})$ by magnesium ion implantation

(2016) Tetsuo Narita et al.   Applied Physics Express

Hydrogen-carbon complexes and the blue luminescence band in GaN

(2016) D. O. Demchenko et al.   JOURNAL OF APPLIED PHYSICS

1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

(2015) Tohru Oka et al.   Applied Physics Express

Material science and device physics in SiC technology for high-voltage power devices

(2015) Tsunenobu Kimoto   JAPANESE JOURNAL OF APPLIED PHYSICS

Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam

(2015) Akira Uedono et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

(2015) Shuji Nakamura   REVIEWS OF MODERN PHYSICS

1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

(2014) Hui Nie et al.   IEEE ELECTRON DEVICE LETTERS

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

(2013) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of growth conditions on the acceptor activation of Mg-doped p-GaN

(2012) Wen-Cheng Ke et al.   MATERIALS CHEMISTRY AND PHYSICS

Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors

(2012) John L. Lyons et al.   PHYSICAL REVIEW LETTERS

Pyramidal inversion domain boundaries revisited

(2011) T. Remmele et al.   APPLIED PHYSICS LETTERS

Role of stable and metastable Mg–H complexes in p-type GaN for cw blue laser diodes

(2011) A. Castiglia et al.   APPLIED PHYSICS LETTERS

Planar Nearly Ideal Edge-Termination Technique for GaN Devices

(2011) A. Merve Ozbek et al.   IEEE ELECTRON DEVICE LETTERS

Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice

(2010) S.E. Bennett et al.   ULTRAMICROSCOPY

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

(2008) Masahito Kodama et al.   Applied Physics Express