Progress on and challenges of p-type formation for GaN power devices

Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis

(2020) Kenji Iwata et al.   JOURNAL OF APPLIED PHYSICS

Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing

(2020) Hideki Sakurai et al.   Applied Physics Express

Identification of origin of E C –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy

(2020) Masahiro Horita et al.   Applied Physics Express

Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer

(2019) Kenji Iwata et al.   Applied Physics Express

4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability

(2019) Hiroshi Ohta et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Characterization of hole traps in MOVPE-grown p-type GaN layers using low-frequency capacitance deep-level transient spectroscopy

(2019) Tatsuya Kogiso et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

(2019) Kazutaka Kanegae et al.   APPLIED PHYSICS LETTERS

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

(2019) Takuya Maeda et al.   IEEE ELECTRON DEVICE LETTERS

Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

(2019) Tetsuo Narita et al.   Applied Physics Express

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

(2019) Michal Bockowski   APPLIED PHYSICS LETTERS

Overview of carrier compensation in GaN layers grown by MOVPE: Toward the application of vertical power devices

(2019) Tetsuo Narita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Demonstration of 1200 V / 1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process

(2019) Ryo Tanaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy

(2018) Kazutaka Kanegae et al.   Applied Physics Express

Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

(2018) Naoki Sawada et al.   Applied Physics Express

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

(2018)   JOURNAL OF APPLIED PHYSICS

Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures

(2018) Tetsuo Narita et al.   Applied Physics Express

Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ¯ ) p-type GaN fabricated by sequential ion-implantation of Mg and H

(2018) K. Shima et al.   APPLIED PHYSICS LETTERS

The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE

(2018)   JOURNAL OF APPLIED PHYSICS

Wide range doping control and defect characterization of GaN layers with various Mg concentrations

(2018)   JOURNAL OF APPLIED PHYSICS

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

(2017) Masahiro Horita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies

(2017) Masahiko Matsubara et al.   JOURNAL OF APPLIED PHYSICS

Cathodoluminescence Study on Thermal Recovery Process of Mg-Ion Implanted N-Polar GaN

(2017) Keita Kataoka et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams

(2017) Akira Uedono et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

P-type doping of GaN$(000\bar{1})$ by magnesium ion implantation

(2016) Tetsuo Narita et al.   Applied Physics Express

Opportunities and challenges in GaN metal organic chemical vapor deposition for electron devices

(2016) Koh Matsumoto et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

(2016) Guanxi Piao et al.   JOURNAL OF CRYSTAL GROWTH

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

(2015) Z. Zhang et al.   APPLIED PHYSICS LETTERS

Vertical Power p-n Diodes Based on Bulk GaN

(2015) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates

(2015) Takeshi Tanaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Formation of definite GaN p–n junction by Mg-ion implantation to n − -GaN epitaxial layers grown on a high-quality free-standing GaN substrate

(2015) Takuya Oikawa et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN

(2015) Jordan D. Greenlee et al.   ECS Journal of Solid State Science and Technology

Recent progress of GaN power devices for automotive applications

(2014) Tetsu Kachi   JAPANESE JOURNAL OF APPLIED PHYSICS

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

(2014) Jordan D. Greenlee et al.   JOURNAL OF APPLIED PHYSICS

Properties of the main Mg-related acceptors in GaN from optical and structural studies

(2014) B. Monemar et al.   JOURNAL OF APPLIED PHYSICS

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

(2014) J. L. Lyons et al.   PHYSICAL REVIEW B

Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

(2013) Stéphane Brochen et al.   APPLIED PHYSICS LETTERS

Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

(2013) Unhi Honda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

(2013) Yuka Kuwano et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension

(2012) Hiroki Niwa et al.   Applied Physics Express

Optical and structural studies of homoepitaxially grown m-plane GaN

(2012) S. Khromov et al.   APPLIED PHYSICS LETTERS

Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors

(2012) John L. Lyons et al.   PHYSICAL REVIEW LETTERS

Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

(2011) A. Y. Polyakov et al.   JOURNAL OF APPLIED PHYSICS

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

(2011) B.N. Feigelson et al.   JOURNAL OF CRYSTAL GROWTH

Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN

(2008) Gon Namkoong et al.   APPLIED PHYSICS LETTERS

Magnesium diffusion profile in GaN grown by MOVPE

(2008) Z. Benzarti et al.   JOURNAL OF CRYSTAL GROWTH