Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

(2017) Shigeyoshi Usami et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

(2016) Kazuki Nomoto et al.   IEEE ELECTRON DEVICE LETTERS

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

(2016) Isabella Rossetto et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High breakdown voltage p-n diodes on GaN on sapphire by MOCVD

(2016) Chirag Gupta et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Progress in bulk GaN growth

(2015) Ke Xu et al.   Chinese Physics B

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

(2015) Yuhao Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Vertical Power p-n Diodes Based on Bulk GaN

(2015) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Material science and device physics in SiC technology for high-voltage power devices

(2015) Tsunenobu Kimoto   JAPANESE JOURNAL OF APPLIED PHYSICS

Investigation of leakage current paths in n-GaN by conductive atomic force microscopy

(2014) Bumho Kim et al.   APPLIED PHYSICS LETTERS

Electronic structure and metallization effects at threading dislocation cores in GaN

(2014) I. Belabbas et al.   COMPUTATIONAL MATERIALS SCIENCE

GaN-on-Si Vertical Schottky and p-n Diodes

(2014)   IEEE ELECTRON DEVICE LETTERS

Recent progress of GaN power devices for automotive applications

(2014) Tetsu Kachi   JAPANESE JOURNAL OF APPLIED PHYSICS

Impact of surface morphology above threading dislocations on leakage current in 4H-SiC diodes

(2012) Hirokazu Fujiwara et al.   APPLIED PHYSICS LETTERS

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

(2011) Yoshitomo Hatakeyama et al.   IEEE ELECTRON DEVICE LETTERS

Growth and strain characterization of high quality GaN crystal by HVPE

(2011) Huiyuan Geng et al.   JOURNAL OF CRYSTAL GROWTH

Recent achievements in AMMONO-bulk method

(2010) R. Dwiliński et al.   JOURNAL OF CRYSTAL GROWTH

Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

(2007) Takehiro Yoshida et al.   JOURNAL OF CRYSTAL GROWTH