Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

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Title
Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations
Authors
Keywords
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Journal
Applied Physics Express
Volume 11, Issue 4, Pages 041001
Publisher
Japan Society of Applied Physics
Online
2018-03-08
DOI
10.7567/apex.11.041001

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