Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

(2018) Lina Cao et al.   APPLIED PHYSICS LETTERS

Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm−1

(2018) S Mandal et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Activation of buried p-GaN in MOCVD-regrown vertical structures

(2018) Wenshen Li et al.   APPLIED PHYSICS LETTERS

Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures

(2018) Tetsuo Narita et al.   Applied Physics Express

Review of Silicon Carbide Power Devices and Their Applications

(2017) Xu She et al.   IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices

(2015) Hiroki Niwa et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

(2013) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Impact Ionization Coefficients in 4H-SiC

(2008) W. S. Loh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES