Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers

(2016) Xinbo Zou et al.   IEEE ELECTRON DEVICE LETTERS

Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays

(2016) Mi-Hee Ji et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

(2015) Meng Qi et al.   APPLIED PHYSICS LETTERS

Vertical Power p-n Diodes Based on Bulk GaN

(2015) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

GaN-on-Si Vertical Schottky and p-n Diodes

(2014)   IEEE ELECTRON DEVICE LETTERS

GaN/SiC avalanche photodiodes

(2011) Qiugui Zhou et al.   APPLIED PHYSICS LETTERS

Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates

(2010) E. Cicek et al.   APPLIED PHYSICS LETTERS

SRIM – The stopping and range of ions in matter (2010)

(2010) James F. Ziegler et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates

(2009) Yun Zhang et al.   APPLIED PHYSICS LETTERS

Geiger-Mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates

(2009) Suk Choi et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Back-illuminated separate absorption and multiplication GaN avalanche photodiodes

(2008) J. L. Pau et al.   APPLIED PHYSICS LETTERS

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE