1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Authors

Keywords

Journal

Volume 37, Issue 2, Pages 161-164

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2015-12-09

DOI

10.1109/led.2015.2506638

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