Demonstration of 1200 V / 1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process

Published 2019 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Demonstration of 1200 V / 1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume -, Issue -, Pages -
Publisher
Japan Society of Applied Physics
Online
2019-12-19
DOI
10.7567/1347-4065/ab6347

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.