Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates

(2017) Chirag Gupta et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

(2017) Min Sun et al.   IEEE ELECTRON DEVICE LETTERS

Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage

(2016) Takuya Maeda et al.   Applied Physics Express

1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

(2016) Kazuki Nomoto et al.   IEEE ELECTRON DEVICE LETTERS

Nondestructive imaging of buried interfaces in SiC and GaN Schottky contacts using scanning internal photoemission microscopy

(2015) Kenji Shiojima et al.   Applied Physics Express

1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

(2015) Tohru Oka et al.   Applied Physics Express

4-kV and 2.8- $\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents

(2015) I. C. Kizilyalli et al.   IEEE ELECTRON DEVICE LETTERS

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

(2015) Hiroshi Ohta et al.   IEEE ELECTRON DEVICE LETTERS

Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals

(2015) S. Pimputkar et al.   JOURNAL OF CRYSTAL GROWTH

Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge

(2015) Taketomo Sato et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Valence band effective-mass Hamiltonians for the group-III nitrides from quasiparticle self-consistentGWband structures

(2012) Atchara Punya et al.   PHYSICAL REVIEW B

Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

(2010) Jun Suda et al.   Applied Physics Express

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

(2010) Yu Saitoh et al.   Applied Physics Express