Ferroelectric field effect transistors: Progress and perspective

Ferroelectric properties of the flexible Pb(Zr0.52Ti0.48)O3 thin film on mica

(2020) Hongyan Qi et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Ferroelectric polymers for non‐volatile memory devices: a review

(2020) Huilin Li et al.   POLYMER INTERNATIONAL

Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights

(2020) Mattia Halter et al.   ACS Applied Materials & Interfaces

Depletion induced depolarization field in Hf1−xZrxO2 metal-ferroelectric-semiconductor capacitors on germanium

(2020) C. Zacharaki et al.   APPLIED PHYSICS LETTERS

Organic ferroelectric field‐effect transistor memories with poly(vinylidene fluoride) gate insulators and conjugated semiconductor channels: a review

(2020) Huie Zhu et al.   POLYMER INTERNATIONAL

Purely in-plane ferroelectricity in monolayer SnS at room temperature

(2020) Naoki Higashitarumizu et al.   Nature Communications

A flexible artificial intrinsic-synaptic tactile sensory organ

(2020) Yu Rim Lee et al.   Nature Communications

A van der Waals Synaptic Transistor Based on Ferroelectric Hf 0.5 Zr 0.5 O 2 and 2D Tungsten Disulfide

(2020) Li Chen et al.   Advanced Electronic Materials

In-Plane Ferroelectric Tin Monosulfide and Its Application in a Ferroelectric Analog Synaptic Device

(2020) Ki Chang Kwon et al.   ACS Nano

Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3

(2020) Justin R. Rodriguez et al.   APPLIED PHYSICS LETTERS

A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: A Temperature-Modulated Operation

(2020) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Integration of perovskite Pb[Zr0.35Ti0.65]O3/HfO2 ferroelectric-dielectric composite film on Si substrate

(2020) Prashant Singh et al.   MICROELECTRONICS INTERNATIONAL

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

(2020) Siqing Zhang et al.   Nanoscale Research Letters

Analysis and Modeling of Polarization Gradient Effect on Negative Capacitance FET

(2020) Ming-Yen Kao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thin‐Film Transistors: Recent Progress in Inkjet‐Printed Thin‐Film Transistors (Adv. Sci. 6/2019)

(2019) Seungjun Chung et al.   Advanced Science

Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers

(2019) Wenwu Xiao et al.   IEEE ELECTRON DEVICE LETTERS

Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit

(2019) Shuoguo Yuan et al.   Nature Communications

Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor

(2019) Meng-Fu Tsai et al.   ACS Applied Materials & Interfaces

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

(2019) Wenwu Xiao et al.   Nanoscale Research Letters

Freestanding crystalline oxide perovskites down to the monolayer limit

(2019) Dianxiang Ji et al.   NATURE

Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT-Gated Black Phosphorus Transistor

(2019) Liu Xie et al.   Advanced Electronic Materials

Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors

(2019) Kuen-Yi Chen et al.   IEEE ELECTRON DEVICE LETTERS

Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption

(2019) Chuanlai Ren et al.   ADVANCED FUNCTIONAL MATERIALS

The rise of 2D dielectrics/ferroelectrics

(2019) Minoru Osada et al.   APL Materials

Multi-level operation of three-dimensionally stacked non-volatile ferroelectric polymer memory with high-performance hole-injection layer

(2019) Sun Kak Hwang et al.   ORGANIC ELECTRONICS

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors

(2018) Halid Mulaosmanovic et al.   ACS Applied Materials & Interfaces

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

(2018) Si Joon Kim et al.   APPLIED PHYSICS LETTERS

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

(2018) Robin Materlik et al.   JOURNAL OF APPLIED PHYSICS

Design of DRAM-NAND flash hybrid main memory and Q-learning-based prefetching method

(2018) Su-Kyung Yoon et al.   JOURNAL OF SUPERCOMPUTING

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

(2018) Thomas Mikolajick et al.   MRS BULLETIN

Resistive non-volatile memories fabricated with poly(vinylidene fluoride)/poly(thiophene) blend nanosheets

(2018) Huie Zhu et al.   RSC Advances

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

(2018) Mingsheng Long et al.   ADVANCED FUNCTIONAL MATERIALS

Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

(2018) Binjian Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Write Disturb in Ferroelectric FETs and Its Implication for 1T-FeFET AND Memory Arrays

(2018) Kai Ni et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

(2018) Si Joon Kim et al.   JOM

Electrical properties of Pb[Zr0.35Ti0.65]O3 on PEALD Al2O3 for NVM applications

(2018) Prashant Singh et al.   MICROELECTRONICS INTERNATIONAL

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors

(2018) Jiuren Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery

(2017) Korok Chatterjee et al.   IEEE ELECTRON DEVICE LETTERS

Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates

(2017) Takahisa Shiraishi et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes

(2017) Yu Zhou et al.   NANO LETTERS

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

(2017) Wenjun Ding et al.   Nature Communications

PVDF-Based Ferroelectric Polymers in Modern Flexible Electronics

(2017) Xin Chen et al.   Advanced Electronic Materials

Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O3 Ferroelectric Field-Effect Transistors

(2017) Alexey Lipatov et al.   Advanced Electronic Materials

Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si

(2016) Anna Chernikova et al.   ACS Applied Materials & Interfaces

Induction of ferroelectricity in nanoscale ZrO 2 /HfO 2 bilayer thin films on Pt/Ti/SiO 2 /Si substrates

(2016) Y.W. Lu et al.   ACTA MATERIALIA

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

(2016) Michael Hoffmann et al.   ADVANCED FUNCTIONAL MATERIALS

Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory

(2016) Changhyun Ko et al.   ADVANCED MATERIALS

Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties

(2016) Sergei Zarubin et al.   APPLIED PHYSICS LETTERS

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

(2016) Takahisa Shiraishi et al.   APPLIED PHYSICS LETTERS

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

(2016) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides

(2016) Ruixiang Fei et al.   PHYSICAL REVIEW LETTERS

Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

(2016) Fucai Liu et al.   Nature Communications

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

(2016) S. Riedel et al.   AIP Advances

Ultrasensitive and Broadband MoS2Photodetector Driven by Ferroelectrics

(2015) Xudong Wang et al.   ADVANCED MATERIALS

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

(2015) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

PZT to Lead Free Piezo Ceramics: A Review

(2015) P. K. Panda et al.   FERROELECTRICS

Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

(2015) M. H. Lee et al.   IEEE ELECTRON DEVICE LETTERS

High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode

(2015) Young Tack Lee et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors

(2015) Ngoc Huynh Van et al.   Nanoscale

Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

(2015) J. Muller et al.   ECS Journal of Solid State Science and Technology

Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

(2014) Han Joon Kim et al.   APPLIED PHYSICS LETTERS

Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications

(2014) Ngoc Huynh Van et al.   NANOTECHNOLOGY

Thin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory

(2014) Dhinesh Babu Velusamy et al.   ORGANIC ELECTRONICS

Investigation of electrical properties of individual GaN nanowire-based ferroelectric field effect transistor

(2014) Y. Q. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

A million spiking-neuron integrated circuit with a scalable communication network and interface

(2014) P. A. Merolla et al.   SCIENCE

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Phase transition and huge ferroelectric polarization observed in BiFe1−xGaxO3 thin films

(2013) Jingdan Yan et al.   APPLIED PHYSICS LETTERS

Dynamic Observation of Brain-Like Learning in a Ferroelectric Synapse Device

(2013) Yu Nishitani et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electrical characterization of MFeOS gate stacks for ferroelectric FETs

(2013) Atul Kumar et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Understanding crystallization features of P(VDF-TrFE) copolymers under confinement to optimize ferroelectricity in nanostructures

(2013) Mari-Cruz García-Gutiérrez et al.   Nanoscale

Flexible graphene–PZT ferroelectric nonvolatile memory

(2013) Wonho Lee et al.   NANOTECHNOLOGY

Revisiting the δ-phase of poly(vinylidene fluoride) for solution-processed ferroelectric thin films

(2013) Mengyuan Li et al.   NATURE MATERIALS

Three-terminal ferroelectric synapse device with concurrent learning function for artificial neural networks

(2012) Y. Nishitani et al.   JOURNAL OF APPLIED PHYSICS

Electronic Band Structure of Exfoliated Titanium- and/or Niobium-Based Oxide Nanosheets Probed by Electrochemical and Photoelectrochemical Measurements

(2012) Kosho Akatsuka et al.   Journal of Physical Chemistry C

Facile Preparation of Highly Oriented Poly(vinylidene fluoride) Langmuir–Blodgett Nanofilms Assisted by Amphiphilic Polymer Nanosheets

(2012) Huie Zhu et al.   MACROMOLECULES

MoS2Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel

(2012) Hee Sung Lee et al.   Small

Ferroelectric memory based on nanostructures

(2012) Xingqiang Liu et al.   Nanoscale Research Letters

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

A biophysically-based neuromorphic model of spike rate- and timing-dependent plasticity

(2011) G. Rachmuth et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Spike timing dependent plasticity: a consequence of more fundamental learning rules

(2010) Harel Shouval   Frontiers in Computational Neuroscience

From Vinylidene Fluoride (VDF) to the Applications of VDF-Containing Polymers and Copolymers: Recent Developments and Future Trends†

(2009) Bruno Ameduri   CHEMICAL REVIEWS

Polymeric gate dielectric interlayer of cross-linkable poly(styrene-r-methylmethacrylate) copolymer for ferroelectric PVDF-TrFE field effect transistor memory

(2009) Jiyoun Chang et al.   ORGANIC ELECTRONICS

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

(2009) X. Hong et al.   PHYSICAL REVIEW LETTERS

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

THE EFFECT OF REDUCED GATE LEAKAGE ON IMPROVED RETENTION TIME OF METAL-FERROELECTRIC (PbZr0.53Ti0.47O3)-INSULATOR (ZrO2)-SEMICONDUCTOR CAPACITORS

(2008) Wen-chieh Shih et al.   INTEGRATED FERROELECTRICS

A Ferroelectric Gate Field Effect Transistor with a ZnO/Pb(Zr,Ti)O3Heterostructure Formed on a Silicon Substrate

(2008) Hiroyuki Tanaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS