Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

Published 2018 View Full Article

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Title
Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 10, Pages 1508-1511
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-09-04
DOI
10.1109/led.2018.2868275

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