Article
Chemistry, Physical
Huihuang Yang, Qian Yang, Lihua He, Xiaomin Wu, Changsong Gao, Xianghong Zhang, Liuting Shan, Huipeng Chen, Tailiang Guo
Summary: This study presents a quasi-volatile transistor memory based on organic polymer/perovskite quantum dot blend, which demonstrates significantly longer data retention time and faster data programming speed compared to other organic non-volatile memories. The device also shows improved retention characteristics under photoelectric synergistic stimulation and good electrical performance under bending conditions.
Article
Engineering, Electrical & Electronic
E. R. Hsieh, Z. Y. Wang, C. F. Huang, Y. S. Wu
Summary: This study introduces a novel nonvolatile memory with high storage density and long-term data retention capability. Utilizing the ferroelectric mechanism, fast programming and erasing operations are achieved, along with stable operation in different temperature environments.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Chemistry, Physical
Sungjun Kim, Keun Heo, Sunghun Lee, Seunghwan Seo, Hyeongjun Kim, Jeongick Cho, Hyunkyu Lee, Kyeong-Bae Lee, Jin-Hong Park
Summary: This study optimized the performance of ferroelectric materials by investigating the effects of different formation temperatures and contact metals on ferroelectric transistors, making breakthroughs in simulating synaptic characteristics. Metals forming relatively high barriers are beneficial for improving dynamic range and nonlinearity.
NANOSCALE HORIZONS
(2021)
Article
Engineering, Electrical & Electronic
Nujhat Tasneem, Muhammad M. Islam, Zheng Wang, Hang Chen, Jae Hur, Dina Triyoso, Steven Consiglio, Kanda Tapily, Robert Clark, Gert Leusink, Shimeng Yu, Winston Chern, Asif Khan
Summary: In this study, ferroelectric ZrO2-based p-type FEFETs were fabricated and the impact of ferroelectric and interfacial oxide layer thickness on device performance was investigated. The results showed that decreasing thickness reduces write voltages and memory window.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Sangho Lee, Giuk Kim, Taeho Kim, Taehyong Eom, Sanghun Jeon
Summary: A novel VP-FeFET is proposed in this study, which can adjust the capacitance ratio between the ferroelectric film and gate insulator by modulating the channel height, resulting in significantly enhanced endurance and speed without increasing the footprint of the device.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2022)
Article
Optics
Rui Tang, Kouhei Watanabe, Masahiro Fujita, Hanzhi Tang, Tomohiro Akazawa, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka
Summary: A non-volatile optical phase shifter is demonstrated by driving a III-V/Si hybrid optical phase shifter with a ferroelectric field-effect transistor. The phase shifter achieves multistate non-volatile phase shifts with CMOS-compatible operation voltages and low switching energy up to 3.3 nJ. With a proposed crossbar array architecture, this work enables the realization of large-scale non-volatile programmable photonic integrated circuits.
LASER & PHOTONICS REVIEWS
(2023)
Article
Nanoscience & Nanotechnology
Goeun Pyo, Gwang Jun Lee, Seungchul Lee, Jae Hoon Yang, Su Jin Heo, Gyeong Hyeon Choi, SeungNam Cha, Jae Eun Jang
Summary: By studying the conductivity modulation of a graphene electrode with a micro-hole structure as a gate field transfer electrode, the proposed VTFT structure shows improved performance, with 20 times higher on-current, ten times higher on-state current, and 50% reduced off-state current compared to a VTFT using simple graphene working function modulation.
ADVANCED ELECTRONIC MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
Yao Ni, Yongfei Wang, Wentao Xu
Summary: FTSM, a key component in flexible electronics, utilizes floating-gate, charge-trap, and ferroelectric mechanisms for nonvolatile information storage, and can be operated by optical inputs through the introduction of an optical sensory module. Transistor-structured artificial synapse, a special type of FTSM, mimics important functions of biological synapses to achieve brain-inspired memory behaviors and nervous signal transmissions.
Article
Chemistry, Multidisciplinary
Marco Hoeppner, Bahman Kheradmand-Boroujeni, Joern Vahland, Michael Franz Sawatzki, David Kneppe, Frank Ellinger, Hans Kleemann
Summary: The high-frequency and low-voltage operation of organic thin-film transistors (OTFTs) is crucial for the commercial success of flexible electronics. While significant progress has been made, technology maturity remains a key challenge, including scalability, integrability, and device reliability.
Article
Materials Science, Multidisciplinary
Giuk Kim, Sangho Lee, Taehyong Eom, Taeho Kim, Minhyun Jung, Hunbeom Shin, Yeongseok Jeong, Myounggon Kang, Sanghun Jeon
Summary: A ferroelectric field-effect transistor (FeFET) has the potential to replace current NAND flash memory due to its high operation speed, low power consumption, and attractive nonvolatile characteristics. However, the representative gate stack of a metal-ferroelectric-insulator-semiconductor (MFIS) has limitations such as voltage drop and small memory window. In this study, we introduce material and structural approaches to address these issues and achieve improved performance for FeFETs.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Chemistry, Multidisciplinary
Mor Mordechai Dahan, Halid Mulaosmanovic, Or Levit, Stefan Dunkel, Sven Beyer, Eilam Yalon
Summary: The discovery of ferroelectric doped HfO2 enables the development of scalable and CMOS-compatible ferroelectric field-effect transistor (FeFET) technology, which has the potential to meet the demand for fast, low-power, low-cost, and high-density nonvolatile memory and neuromorphic devices. This study demonstrates that a single subnanosecond pulse can fully switch HfO2-based FeFET, revealing the high-speed capabilities of FeFETs and shedding light on the fundamental polarization switching speed limits and kinetics.
Article
Engineering, Electrical & Electronic
Mor M. Dahan, Evelyn T. Breyer, Stefan Slesazeck, Thomas Mikolajick, Shahar Kvatinsky
Summary: This paper proposes a memory architecture called crossed-AND (C-AND) for FeFET memory, which addresses the asymmetric switching voltage issue and enables fast read and write operations for entire words. It also reduces read errors and write disturbs.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2022)
Article
Engineering, Electrical & Electronic
William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Yao-Jen Lee, Pin-Hua Wu, Hsin-Chun Tseng, Hsu-Tang Liao, Yu-Wen Chou, Min-Yu Chiu, Yan-Qing Chen
Summary: In this work, a ferroelectric thin-film transistor (Fe-TFT) with polycrystalline-silicon (poly-Si) channel and HfZrO(x) gate dielectric is fabricated to study the characteristics of non-volatile memory (NVM). It is found that significant threshold voltage (V(TH)) modulation can be achieved with low pulse voltages less than +/- 3.5 V and pulse widths within 1 mu s. The impact of program/erase (PRG/ERS) pulse voltage (V(PRG)/V(ERS)) and pulse width on endurance is critical for achieving NVM characteristics of low voltage and high speed operation.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Physics, Applied
Meili Xu, Xindong Zhang, Weihao Qi, Shizhang Li, Wei Wang
Summary: Fe-OFET-NVMs offer attractive features for future memory applications, and high-performance top-gate Fe-OFET-NVMs can be achieved by employing a polymer semiconductor channel and self-organized ferroelectric/dielectric gate insulators. The optimized Fe-OFET-NVM exhibits a high mobility, reliable endurance, stable retention capability, and reduced operating voltage, comparable to or better than previous Fe-OFET-NVMs.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Jimin Han, Boyoung Jeong, Dwipak Prasad Sahu, Hyun-Mi Kim, Tae-Sik Yoon
Summary: Non-volatile charge-trap memory characteristics were investigated in thin-film transistors, utilizing an indium-gallium-zinc oxide channel and an oxygen-deficient hafnium oxide (HfO2-x) charge-trap layer. The HfO2-x charge-trap layer, deposited at low temperature, exhibited high defect density and stored electrons. The device showed non-volatile memory characteristics, with positive gate bias inducing electron charging in the charge-trap layer and negative bias reversibly reducing it.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Multidisciplinary
Jae Ryung Choi, Seunggun Yu, Haejong Jung, Sun Kak Hwang, Richard Hahnkee Kim, Giyoung Song, Sung Hwan Cho, Insung Bae, Soon Man Hong, Chong Min Koo, Cheolmin Park
Article
Engineering, Chemical
Insung Bae, Keun-Hwan Oh, Sung-Hyun Yun, Hyuk Kim
JOURNAL OF MEMBRANE SCIENCE
(2017)
Article
Engineering, Chemical
Keun-Hwan Oh, Insung Bae, Hongkyung Lee, Hyuk Kim, Hee-Tak Kim
JOURNAL OF MEMBRANE SCIENCE
(2017)
Article
Engineering, Chemical
Insung Bae, Keun-Hwan Oh, Minhyuk Yun, Min Kwan Kang, Hyun Hoon Song, Hyuk Kim
JOURNAL OF MEMBRANE SCIENCE
(2018)
Article
Chemistry, Multidisciplinary
Yujeong Lee, Kang Lib Kim, Han Sol Kang, Beomjin Jeong, Chanho Park, Insung Bae, Seok Ju Kang, Youn Jung Park, Cheolmin Park
Article
Nanoscience & Nanotechnology
Insung Bae, Richard Hahnkee Kim, Sun Kak Hwang, Seok Ju Kang, Cheolmin Park
ACS APPLIED MATERIALS & INTERFACES
(2014)
Article
Chemistry, Multidisciplinary
Sun Kak Hwang, Sung-Yong Min, Insung Bae, Suk Man Cho, Kang Lib Kim, Tae-Woo Lee, Cheolmin Park
Article
Green & Sustainable Science & Technology
Insung Bae, Bongsoo Kim, Young Kim, Hyuk Kim, Keun-Hwan Oh
Article
Polymer Science
Hongdae Seo, Insung Bae
Article
Engineering, Chemical
Hu-Geun Kwon, Insung Bae, Seong-Ho Choi
Summary: Crosslinked poly(arylene ether ketone) membranes were synthesized for use in non-aqueous redox flow batteries, resulting in improved cell efficiency.
JOURNAL OF MEMBRANE SCIENCE
(2021)
Article
Polymer Science
Gaae Yun, Seong Ku Kim, Insung Bae
Summary: The introduction of gadolinium-doped cerium oxide nanoparticles and hydrocarbon-based proton exchange membrane improves the physical and chemical stability of the membrane, enhances proton conductivity, and prevents membrane swelling.
Article
Chemistry, Physical
Hyunseung Lee, Hongdae Seo, Seong Ku Kim, Insung Bae
Summary: The aligned nanostructure of perfluorinated polymer electrolytes, achieved through capillary force lithography, enables increased proton conductivity. A hierarchical structure is realized through soft lithography, allowing control over the structures of proton-transporting channels. The line-patterned membranes show enhanced proton conductivities, as confirmed by electrochemical impedance analysis. Moreover, an increased interfacial contact area improves the power generation efficiency of the membrane-electrode assembly in proton-exchange membrane fuel cells.
ACS APPLIED ENERGY MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Kang Lib Kim, Sung Hwan Cho, Jae-Bok Lee, Gwangmook Kim, Kyuho Lee, Seung Won Lee, Han Sol Kang, Chanho Park, Jong-Hyun Ahn, Wooyoung Shim, Insung Bae, Cheolmin Park
Summary: This study presents transparent and flexible capacitive pressure sensors using a high-k ionic gel blended with an ionic liquid. The topological semicrystalline surface of the blend films enhances their sensitivity to pressure. With optically transparent and mechanically flexible graphene electrodes, a novel pressure sensor with a self-assembled crystalline topology is developed. It exhibits high sensitivity, rapid response times, and durable device operation, making it suitable for various wearable applications.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Keun-Hwan Oh, Insung Bae
ACS APPLIED NANO MATERIALS
(2019)
Article
Materials Science, Multidisciplinary
Jinfei Dai, Chenjing Zhao, Jie Xu, Hossein Roshan, Hua Dong, Francesco Di Stasio, Fang Yuan, Bo Jiao, Zhaoxin Wu
Summary: In this study, the performance of perovskite nanocrystal light emitting diodes (PNC-LEDs) was enhanced through rational device structure design and the application of high-performance perovskite nanocrystal emitting layers.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Jia-Hua Yeh, Suhendro Purbo Prakoso, Leon Lukhas Santoso, Shi-Ju Chen, Bryan Chiang, Ju-Chieh Cheng, Ru-Ning Zhang, Yu-Cheng Chiu
Summary: This study demonstrates the application of a renewable material called dextrin-SMS in the production of electret filters and transistor memory. Dextrin-SMS material can maintain prolonged electrostatic charges and has a relatively wide memory window, making it suitable for the production of biodegradable face masks and green electronics.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Ahmad Telfah, Qais M. Al-Bataineh, Ahmad A. Ahmad, Rund Abu-Zurayk, Carlos J. Tavares, Johannes Etzkorn, Farzad Foadian
Summary: Polyacrylic acid complexed with polyaniline (PAA/PANI) composite materials have the potential to form organic mixed ion-electron conductive (OMIEC) films, which can be used in optoelectronic and energy storage applications. The composite films are formed through an acid-base reaction, resulting in strong electrostatic interactions and intermolecular hydrogen bonds between PANI and PAA. The separation of PANI-rich domains from PAA-rich matrix in the composite films is observed. The electrical conductivity of the composite films is higher when the content of PANI is 33 wt%, due to the high ionic-electronic coupling at the interface between phase-separated regions.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Min-Chih Hou, Dian Luo, Yu-Ting Huang, Shun-Wei Liu, Chin-Wei Lu, Chih-Hao Chang, Hai-Ching Su
Summary: Light-emitting electrochemical cells (LECs) have great potential for novel emission applications, but their relatively low device efficiency hinders their competitiveness with other emission technologies. A study finds that increasing the concentration of small TiO2 nano-particles in the diffuser film can enhance light extraction and improve the device efficiency of LECs.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Qiaoli Niu, Yao Xu, Jun Yang, Wei Hua, Baoxiang Chai, Zequan Zhang, Yuhui Ma, Wenjin Zeng, Ana Flavia Nogueira, Ruidong Xia
Summary: By introducing CPB as a defect passivation agent in the perovskite precursor solution, the optoelectronic properties of perovskite films can be significantly improved and non-radiative carrier recombination can be effectively suppressed. CPB-modified perovskite solar cells exhibit lower trap-state density and stronger carrier migration capability, leading to enhanced power conversion efficiency and stability.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Hulya Ozturk Dogan, Fatma Yildirim, Zeynep Orhan, Ali Ben Ahmed, Mostefa Benhaliliba, Sakir Aydogan
Summary: In this study, efficient self-powered visible and UV photodetectors based on hybrid organic-inorganic materials were demonstrated. The photodetectors showed excellent UV detecting capability and good photoresponsivity.
ORGANIC ELECTRONICS
(2024)