Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications
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Title
Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications
Authors
Keywords
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Journal
NANOTECHNOLOGY
Volume 25, Issue 20, Pages 205201
Publisher
IOP Publishing
Online
2014-05-01
DOI
10.1088/0957-4484/25/20/205201
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