Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications

Title
Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume 25, Issue 20, Pages 205201
Publisher
IOP Publishing
Online
2014-05-01
DOI
10.1088/0957-4484/25/20/205201

Ask authors/readers for more resources

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started